X-ray studies of SiÕGeÕSi„001... epitaxial growth with Te as a surfactant
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چکیده
X-ray standing waves ~XSW! and grazing incidence x-ray diffraction ~GIXD! were used to investigate the crystallinity of ultrathin Ge films grown by molecular-beam epitaxy on Si~001! with and without Te as a surfactant. The Ge layer thickness ranged from 1 to 10 ML. The results clearly indicate that Ge films grown with Te have a higher degree of crystallinity compared to those grown without Te. For example, GIXD shows that 9 ML Ge grown on Si~001! with Te is strained in plane; while the same film grown without Te is relaxed. The ~004!, ~022!, and ~008! XSW results are used to determine the registry of the Ge atoms with respect to the Si lattice. This is compared with macroscopic continuum elasticity theory predictions for Ge/Si~001!.
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